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Proceedings Paper

A novel photoacid generator for chemically amplified resists with ArF exposure
Author(s): Toshikage Asakura; Hitoshi Yamato; Akira Matsumoto; Peter Murer; Masaki Ohwa
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Paper Abstract

Recently a new non-ionic PAG was developed and its performance was evaluated in a model ArF photoresist formulation. The development profile of the photoresist including the new PAG was studied in detail by using dissolution rate measurement (DRM) apparatus and compared with popular PAGs, such as triphenylsulfonium triflate (TPST), bis(p-ter-butylphenyl)iodonium triflate (BTIT) and 5-norbornene-2,3-dicarboximidyl trifluoromethanesulfonate (NDIT). As the consequences, the photoefficiency of the new PAG was higher than BTIT and NDIT and comparable to TPST. From the DRM results, the new PAG showed a high contrast (high tan θ value). In addition, the simulation based on the results of DRM suggested that the new PAG is superior to TPST in terms of resolution and depth of focus (DOF) latitude.

Paper Details

Date Published: 12 June 2003
PDF: 9 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.483733
Show Author Affiliations
Toshikage Asakura, Ciba Specialty Chemicals K.K. (Japan)
Hitoshi Yamato, Ciba Specialty Chemicals K.K. (Japan)
Akira Matsumoto, Ciba Specialty Chemicals K.K. (Japan)
Peter Murer, Ciba Specialty Chemicals K.K. (Japan)
Masaki Ohwa, Ciba Specialty Chemicals K.K. (Japan)

Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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