Proceedings Paper
Characterization of line-edge roughness in resist patterns and estimations of its effect on device performance| Format | Member Price | Non-Member Price |
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Paper Abstract
A guideline for evaluating LER and total procedure to estimate effects of measured LER on device performance were proposed. Spatial-frequency distributions of LER in various resist materials were investigated and general characteristics of spatial-frequency distribution of LER were obtained. Measurement parameters for accurate LER measurement can be calculated according to the guideline. Measured line-width distribution was used for predicting degradation and variation in MOS transistor performance using the 2D device simulation. Effect of long-period component of LER was clarified as well as short-period component.
Paper Details
Date Published: 2 June 2003
PDF: 10 pages
Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.483519
Published in SPIE Proceedings Vol. 5038:
Metrology, Inspection, and Process Control for Microlithography XVII
Daniel J. Herr, Editor(s)
PDF: 10 pages
Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.483519
Show Author Affiliations
Atsuko Yamaguchi, Hitachi, Ltd. (Japan)
Ryuta Tsuchiya, Hitachi, Ltd. (Japan)
Hiroshi Fukuda, Hitachi, Ltd. (Japan)
Ryuta Tsuchiya, Hitachi, Ltd. (Japan)
Hiroshi Fukuda, Hitachi, Ltd. (Japan)
Osamu Komuro, Hitachi High-Technologies Corp. (Japan)
Hiroki Kawada, Hitachi High-Technologies Corp. (Japan)
Takashi Iizumi, Hitachi High-Technologies Corp. (Japan)
Hiroki Kawada, Hitachi High-Technologies Corp. (Japan)
Takashi Iizumi, Hitachi High-Technologies Corp. (Japan)
Published in SPIE Proceedings Vol. 5038:
Metrology, Inspection, and Process Control for Microlithography XVII
Daniel J. Herr, Editor(s)
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