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Proceedings Paper

Characterization of line-edge roughness in resist patterns and estimations of its effect on device performance
Author(s): Atsuko Yamaguchi; Ryuta Tsuchiya; Hiroshi Fukuda; Osamu Komuro; Hiroki Kawada; Takashi Iizumi
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Paper Abstract

A guideline for evaluating LER and total procedure to estimate effects of measured LER on device performance were proposed. Spatial-frequency distributions of LER in various resist materials were investigated and general characteristics of spatial-frequency distribution of LER were obtained. Measurement parameters for accurate LER measurement can be calculated according to the guideline. Measured line-width distribution was used for predicting degradation and variation in MOS transistor performance using the 2D device simulation. Effect of long-period component of LER was clarified as well as short-period component.

Paper Details

Date Published: 2 June 2003
PDF: 10 pages
Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.483519
Show Author Affiliations
Atsuko Yamaguchi, Hitachi, Ltd. (Japan)
Ryuta Tsuchiya, Hitachi, Ltd. (Japan)
Hiroshi Fukuda, Hitachi, Ltd. (Japan)
Osamu Komuro, Hitachi High-Technologies Corp. (Japan)
Hiroki Kawada, Hitachi High-Technologies Corp. (Japan)
Takashi Iizumi, Hitachi High-Technologies Corp. (Japan)

Published in SPIE Proceedings Vol. 5038:
Metrology, Inspection, and Process Control for Microlithography XVII
Daniel J. Herr, Editor(s)

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