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Proceedings Paper

Intense two-band photoluminescence from silicon carbide embedded in SiO2 matrix
Author(s): Xueqin Liu; Jing Zhang; Qiufen Guo; Yinyue Wang
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Paper Abstract

Intense two band photoluminescence (PL) at room temperature has been obtained from silicon carbide nanocrystals embedded in a SiO2 matrix prepared by co-sputtering Si, C and SiO2 composite targets, and subsequent high temperature annealing. Fourier transform IR spectrosocpy (FTIR) and x-ray photoelectron spectroscopy techniques were employed to analysis the structural properites of composite films. The results showed that SiC nanoparticles were incorporated into the SiO2 matrix. PL is a consequence of the convolution of two luminescent peaks centered at about 520nm and 400nm. These emissions have been assigned to the C-rich clusters and SiC nanocrystals, respectively.

Paper Details

Date Published: 17 September 2002
PDF: 6 pages
Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); doi: 10.1117/12.483097
Show Author Affiliations
Xueqin Liu, Lanzhou Univ. (China)
Jing Zhang, Lanzhou Univ. (China)
Qiufen Guo, Lanzhou Univ. (China)
Yinyue Wang, Lanzhou Univ. (China)

Published in SPIE Proceedings Vol. 4918:
Materials, Devices, and Systems for Display and Lighting
Fuxi Gan; Ming Hsien Wu; Lionel C. Kimerling, Editor(s)

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