
Proceedings Paper
Intense two-band photoluminescence from silicon carbide embedded in SiO2 matrixFormat | Member Price | Non-Member Price |
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Paper Abstract
Intense two band photoluminescence (PL) at room temperature has been obtained from silicon carbide nanocrystals embedded in a SiO2 matrix prepared by co-sputtering Si, C and SiO2 composite targets, and subsequent high temperature annealing. Fourier transform IR spectrosocpy (FTIR) and x-ray photoelectron spectroscopy techniques were employed to analysis the structural properites of composite films. The results showed that SiC nanoparticles were incorporated into the SiO2 matrix. PL is a consequence of the convolution of two luminescent peaks centered at about 520nm and 400nm. These emissions have been assigned to the C-rich clusters and SiC nanocrystals, respectively.
Paper Details
Date Published: 17 September 2002
PDF: 6 pages
Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); doi: 10.1117/12.483097
Published in SPIE Proceedings Vol. 4918:
Materials, Devices, and Systems for Display and Lighting
Fuxi Gan; Ming Hsien Wu; Lionel C. Kimerling, Editor(s)
PDF: 6 pages
Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); doi: 10.1117/12.483097
Show Author Affiliations
Xueqin Liu, Lanzhou Univ. (China)
Jing Zhang, Lanzhou Univ. (China)
Jing Zhang, Lanzhou Univ. (China)
Qiufen Guo, Lanzhou Univ. (China)
Yinyue Wang, Lanzhou Univ. (China)
Yinyue Wang, Lanzhou Univ. (China)
Published in SPIE Proceedings Vol. 4918:
Materials, Devices, and Systems for Display and Lighting
Fuxi Gan; Ming Hsien Wu; Lionel C. Kimerling, Editor(s)
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