In this article, we report the successful fabrication of high-brightness blue LEDs with InGaN/GaN multiple quantum well structures grown by low pressure metalorganic vapor phase epitaxy on sapphire substrates. The active region is composed of five pairs of InGaN well and GaN:Si barrier. The epitaxial wafer is processed into mesa diodes by inductively coupled plasma etching technique, with SiO₂ deposited by plasma-enhanced chemical vapor deposition as the etching mask. The diode chips are then encapsulated into transparent epoxy to form packaged LEDs. The typcial emitting spectrum of the blue LEDs shows a peak wavelength at 460 nm and a FWHM of 30 nm. The working voltage and output power of blue lEDs shows a peak wavelength at 460 nm and a FWHM of 30 nm. The working voltage and output power of blue LEDs at a forward current of 20 mA are 3.6V and 1.5mW, respectively. The reverse leakage current at 5V was about 5μA , and the wavelength uniformity is 0.25 nm.

Date Published: 17 September 2002
PDF: 3 pages
Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); doi: 10.1117/12.483056

Published in SPIE Proceedings Vol. 4918:
Materials, Devices, and Systems for Display and Lighting
Fuxi Gan; Ming Hsien Wu; Lionel C. Kimerling, Editor(s)