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Proceedings Paper

Characteristics of n-GaN after ICP etching
Author(s): Yanjun Han; Song Xue; Wenping Guo; Zhi-Biao Hao; Changzheng Sun; Yi Luo
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Paper Abstract

In this work, a systematic study on the plasma-induced damage on n-type GaN by inductively coupled plasma (ICP) etching is presented. After n-contact metal formation and annealing, electrical property is evaluated by the I-V characteristics. Room temperature photoluminescence (PL) measurement of etched GaN surfaces is performed to investigate the etching damage on the optical properties of n-type GaN. Investigation of the effect of additive gas RF chuck power on these characteristics has also been carried out. The better etching conditions have been obtained based on these results.

Paper Details

Date Published: 17 September 2002
PDF: 4 pages
Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); doi: 10.1117/12.483055
Show Author Affiliations
Yanjun Han, Tsinghua Univ. (China)
Song Xue, Tsinghua Univ. (China)
Wenping Guo, Tsinghua Univ. (China)
Zhi-Biao Hao, Tsinghua Univ. (China)
Changzheng Sun, Tsinghua Univ. (China)
Yi Luo, Tsinghua Univ. (China)

Published in SPIE Proceedings Vol. 4918:
Materials, Devices, and Systems for Display and Lighting
Fuxi Gan; Ming Hsien Wu; Lionel C. Kimerling, Editor(s)

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