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Proceedings Paper

Systematic studies on transition layers of carbides between CVD diamond films and substrates of strong carbide-forming elements
Author(s): Xiang-Liu Jiang; Fang-Qing Zhang; Jiang-Qi Li; Bin Yang; Guang-Hua Chen
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Paper Abstract

The nucleation and growth mechanism of polycrystalline diamond films prepared by chemical vapor deposition (CVD) have received increasing research interest. To verify the existence of the transition layers between CVD diamond films and substrates, and to investigate their composition, structure and properties are very meaningful research topics for understanding the mechanism of diamond film growth and developing the applications of CVD diamond films. In this work, the transition layers of carbides for the substrates of molybdenum (Mo), silicon (Si), tungsten (W), tantalum (Ta), and niobium (Nb) and titanium (Ti) have been systematically studied by x-ray diffraction characterization. The experiment results have provided evidence of the existence of transition layers and have revealed that the transition layers are polycrystalline Mo2C, SiC, WC and W2C, TaC and Ta2C, NbC and Nb2C, as well as TiC for the substrates of Mo, Si, W, Ta, Nb and Ti, respectively.

Paper Details

Date Published: 1 December 1991
PDF: 7 pages
Proc. SPIE 1534, Diamond Optics IV, (1 December 1991); doi: 10.1117/12.48293
Show Author Affiliations
Xiang-Liu Jiang, Beijing Institute of Science and Technology (China)
Fang-Qing Zhang, Lanzhou Univ. (China)
Jiang-Qi Li, Lanzhou Univ. (China)
Bin Yang, Lanzhou Univ. (China)
Guang-Hua Chen, Lanzhou Univ. (China)

Published in SPIE Proceedings Vol. 1534:
Diamond Optics IV
Albert Feldman; Sandor Holly, Editor(s)

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