Share Email Print

Proceedings Paper

High-power EUV lithography sources based on gas discharges and laser-produced plasmas
Author(s): Uwe Stamm; Imtiaz Ahmad; Istvan Balogh; H. Birner; D. Bolshukhin; J. Brudermann; S. Enke; Frank Flohrer; Kai Gäbel; S. Götze; G. Hergenhan; Jürgen Kleinschmidt; Diethard Klöpfel; Vladimir Korobotchko; Jens Ringling; Guido Schriever; C. D. Tran; C. Ziener
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Semiconductor chip manufacturers are expecting to use extreme UV lithography for production in 2009. EUV tools require high power, brilliant light sources at 13.5 nm with collector optics producing 120 W average power at entrance of the illuminator system. Today the power and lifetime of the EUV light source are considered as the most critical issue for EUV lithography. The present paper gives an update of the development status of EUV light sources at XTREME technologies, a joint venture of Lambda Physik AG, Goettingen, and Jenoptik LOS GmbH, Jena, Germany. Results on both laser produced plasma (LPP) and gas discharge produced plasma (GDPP), the two major technologies in EUV sources, are given. The LPP EUV sources use xenon-jet target systems and pulsed lasers with 400 W average power at 10 kHz developed at XTREME technologies. The maximum conversion efficiency form laser power into EUV in-band power is 0.75% into 2π solid angle. With 300 W laser average power at 3300 Hz repetition rate up to 1.5 W EUV radiation is generated at 13.5 nm. After a collector of 5 sr this corresponds to 0.6 W in intermediate focus without spectral purity filter and 0.5 W in intermediate focus with spectral purity filter. The direct generation of the EUV emitting plasma from electrical discharges is much simpler than LPP because the electrical energy has not to be converted into laser radiation before plasma excitation. XTREME technologies' Xenon GDPP EUV sources use the Z-pinch principle with efficient sliding discharge pre-ionization. The plasma pinch size and the available emission angle have been matched to the etendue of the optical system of 2-3 mm2 sr, i.e. no additional etendue related loss reduces the usable EUV power from the source. In continuous operation at 1000 Hz the GDPP sources emit 50W into 2π solid angle are obtained from the Z-pinch sources. Spatial and temporal emission stability of the EUV sources is in the range of a few percent. Debris shields for EUV sources have been developed which give improvement of the collector optics lifetime by several orders of magnitude.

Paper Details

Date Published: 16 June 2003
PDF: 11 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.482676
Show Author Affiliations
Uwe Stamm, XTREME technologies GmbH (Germany)
Imtiaz Ahmad, XTREME technologies GmbH (Germany)
Istvan Balogh, XTREME technologies GmbH (Germany)
H. Birner, XTREME technologies GmbH (Germany)
D. Bolshukhin, XTREME technologies GmbH (Germany)
J. Brudermann, XTREME technologies GmbH (Germany)
S. Enke, XTREME technologies GmbH (Germany)
Frank Flohrer, XTREME technologies GmbH (Germany)
Kai Gäbel, XTREME technologies GmbH (Germany)
S. Götze, XTREME technologies GmbH (Germany)
G. Hergenhan, XTREME technologies GmbH (Germany)
Jürgen Kleinschmidt, XTREME technologies GmbH (Germany)
Diethard Klöpfel, XTREME technologies GmbH (Germany)
Vladimir Korobotchko, XTREME technologies GmbH (Germany)
Jens Ringling, XTREME technologies GmbH (Germany)
Guido Schriever, XTREME technologies GmbH (Germany)
C. D. Tran, XTREME technologies GmbH (Germany)
C. Ziener, XTREME technologies GmbH (Germany)

Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

© SPIE. Terms of Use
Back to Top