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Proceedings Paper

Degradation mechanisms in group-III nitride devices
Author(s): Daniel L. Barton; Marek Osinski
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Paper Abstract

Devices fabricated in the group-III nitride material system have shown significant resistance to the types of degradation common to those encountered in the GaAs and InP -based systems. As a result, GaN-based light emitting diodes have pushed the technological limits of package technology and design for high output power. The relatively high defect densities in these materials have been shown to be a device weakness for laser applications. This paper reviews these concepts to try to give the readers an understanding of the differences between the group-III nitrides and standard III-V materials.

Paper Details

Date Published: 28 August 2002
PDF: 24 pages
Proc. SPIE 10303, Gallium-Nitride-based Technologies: A Critical Review, 1030305 (28 August 2002); doi: 10.1117/12.482621
Show Author Affiliations
Daniel L. Barton, Sandia National Labs. (United States)
Marek Osinski, The Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 10303:
Gallium-Nitride-based Technologies: A Critical Review
Marek Osinski, Editor(s)

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