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Proceedings Paper

Wide-bandgap group-III nitride lasers
Author(s): Takashi Mukai; Shinichi Nagahama; Tomoya Yanamoto; Masahiko Sano
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Paper Abstract

Wide-bandgap group-ill nitride lasers, which emit from near-ultraviolet to pure-blue, are reviewed. Characteristics of 405 nm wavelength laser diodes (LDs) are discussed. Reducing threading dislocation can increase the lifetime of nitride LDs. Using epitaxial lateral overgrowth technique, the dislocation density of the order of 105 cm-2 has been obtained. The relation between the lifetime of nitride LDs and the density of dislocation are discussed. Some optical and electrical properties are very important for optical disk system such as digital versatile disk (DVD) system. In use of the DVD system, important properties of nitride LDs are discussed. Furthermore, near-ultraviolet LDs and pure-blue LDs are described. The near-ultraviolet LDs uses GaN or AlInGaN active layer instead of In GaN.

Paper Details

Date Published: 28 August 2002
PDF: 25 pages
Proc. SPIE 10303, Gallium-Nitride-based Technologies: A Critical Review, 103030B (28 August 2002); doi: 10.1117/12.482616
Show Author Affiliations
Takashi Mukai, Nichia Corp. (Japan)
Shinichi Nagahama, Nichia Corp. (Japan)
Tomoya Yanamoto, Nichia Corp. (Japan)
Masahiko Sano, Nichia Corp. (Japan)

Published in SPIE Proceedings Vol. 10303:
Gallium-Nitride-based Technologies: A Critical Review
Marek Osinski, Editor(s)

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