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Proceedings Paper

Optical studies of InAs/GaAs and Ge/Si quantum dot structures
Author(s): Gwo-Jen Jan; C. M. Lai; F. Y. Chang; Y. H. Perng; C. W. Chang; C. H. Kao; I. C. Jan; H. H. Lin
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Paper Abstract

We studied the photoreflectance (PR) and photoluminescence (PL) spectroscopies of self-assembled InAs quantum dots grown on n+-GaAs (100) by molecular beam epitaxy. The PL spectroscopy of self-assembled Ge quantum dots (Ge-QDs) grown on n+-Si (100) by metal organic chemical vapor deposition epitaxy was also investigated. PL spectra show the optical transitions from the ground state and excited states in the InAs quantum dots (InAs-QDs) and a transition from the ground state in the Ge-QDs at the temperature 20 K. PR spectra show the energy features of the transitions of the ground state and four excited states in the InAs-QDs, InAs wetting layer, and GaAs band-gap. The fitted results of the transition energies and the broadening parameters are reported. The results demonstrate that low growth rate of the InAs-QDs, the submonolayer deposited of the alternating beam, and covered with the overgrowth InGaAs methods, have improved the nano-structure quality of the InAs-QD, grown at 485ºC and V/III ratio of 2. The high quality Ge-QDs were made, and characterized by PL experiments.

Paper Details

Date Published: 1 July 2003
PDF: 12 pages
Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.482478
Show Author Affiliations
Gwo-Jen Jan, National Taiwan Univ. (Taiwan)
C. M. Lai, National Taiwan Univ. (Taiwan)
F. Y. Chang, National Taiwan Univ. (Taiwan)
Y. H. Perng, National Taiwan Univ. (Taiwan)
C. W. Chang, National Taiwan Univ. (Taiwan)
C. H. Kao, National Taiwan Univ. (Taiwan)
I. C. Jan, National Taiwan Univ. (Taiwan)
H. H. Lin, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 4999:
Quantum Sensing: Evolution and Revolution from Past to Future
Manijeh Razeghi; Gail J. Brown, Editor(s)

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