Proceedings Paper
Influence of N-type DBR on characteristics of VCSEL| Format | Member Price | Non-Member Price |
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Paper Abstract
In this paper, a quasi-three-dimension theoretical model for the Vertical-Cavity Surface-Emitting Laser with oxide-confined layers is showed. The distributions of the equal-potential line, injected current density, carrier concentration and the optical field distribution in the cavity are calculated self-consistently by the finite difference method. The influences of the light output window's radius and oxide-confined layers window's radius are studied. At the same time, we study the influence of the N-type DBR on some characteristics of the VCSEL. The results show that there would be a large difference with practical VCSEL ifthe N-type DBR layers were neglected.
Paper Details
Date Published: 5 September 2002
PDF: 5 pages
Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); doi: 10.1117/12.482236
Published in SPIE Proceedings Vol. 4913:
Semiconductor Lasers and Applications
Yi Luo; Yoshiaki Nakano, Editor(s)
PDF: 5 pages
Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); doi: 10.1117/12.482236
Show Author Affiliations
Guofeng Xin, Hebei Univ. of Technology (China)
Hongdong Zhao, Hebei Univ. of Technology (China)
Guoying Chen, Hebei Univ. of Technology (China)
Hongyun Xie, Hebei Univ. of Technology (China)
Hongdong Zhao, Hebei Univ. of Technology (China)
Guoying Chen, Hebei Univ. of Technology (China)
Hongyun Xie, Hebei Univ. of Technology (China)
Lixin Liu, Hebei Univ. of Technology (China)
Cunshan Zhang, Hebei Univ. of Technology (China)
XiaoFeng Duan, Institute of Ordnance Engineering (China)
Cunshan Zhang, Hebei Univ. of Technology (China)
XiaoFeng Duan, Institute of Ordnance Engineering (China)
Published in SPIE Proceedings Vol. 4913:
Semiconductor Lasers and Applications
Yi Luo; Yoshiaki Nakano, Editor(s)
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