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Proceedings Paper

High-density self-organized quantum dots with improved size uniformity for optical device applications
Author(s): Yoshitaka Okada; K. Akahane; Mitsuo Kawabe
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Paper Abstract

We review the properties of ordered InGaAs QDs arrays, which are formed by self-organization mechanism on GaAs (311)B substrate. We show that the QDs exhibit remarkably different characteristics compared to the more commonly studied InAs QDs grown on GaAs (00 1) substrate. In addition, some recent results of our strain-compensation growth of InAs QDs stack structures on InP (311)B substrate are presented. The stacked InAs QDs on InP (311)B substrate show strong photoluminescence emission at > 1.55µm at room temperature, which is thereby considered to be promising for the next generation fiber-optic communication devices.

Paper Details

Date Published: 5 September 2002
PDF: 5 pages
Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); doi: 10.1117/12.482205
Show Author Affiliations
Yoshitaka Okada, Univ. of Tsukuba (Japan)
K. Akahane, Communications Research Lab. (Japan)
Mitsuo Kawabe, National Institue of Material Science (Japan)

Published in SPIE Proceedings Vol. 4913:
Semiconductor Lasers and Applications
Yi Luo; Yoshiaki Nakano, Editor(s)

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