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Proceedings Paper

Diamond-like carbon deposited by femtosecond pulsed-laser ablation: evidence of nanocrystalline diamond
Author(s): Florence Garrelie; Anne Sophie Loir; Francois Goutaland; C. Donnet; Ronan Le Harzic; Benoit Angleraud; Youcef Ouerdane; Pierre Laporte
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Paper Abstract

Pulsed laser ablation is a well-known technique used for thin film deposition, extending from oxydes to hard and wear resistant Diamond-Line Carbon (DLC) films. Most of the previous studies devoted to DLC thin films elaboration have used pulsed duration in the nanosecond range. The present study concerns femtosecond (10-15 s range) laser ablation of a graphite target for the elaboration of Diamond-Like Carbon. Compared to conventional nanosecond laser ablation, femtosecond laser pulses allow the production of high energy (up to a few keV) ions in the plasma, which may strongly affect the structure and properties of the deposited films. DLC films have been deposited under vacuum onto (100) p-type silicon substrates at room temperature, by ablating graphite targets with femtosecond laser pulses. The nature and properties of the film have been characterized by various techniques, including Raman, XPS and AFM. Discussion will be focused on the comparison between present results obtained using femtosecond laser pulses, with previously published results related to DLC films deposited using nanosecond laser pulses. Especially, Raman spectra of DLC films obtained by nanosecond laser ablation always show the two well-known D and G bands (located respectively at around 1350 cm-1 and 1550 cm-1), whereas some DLC films obtained when using femtosecond laser pulses exhibit an intense peak at 1140 cm-1, which may be attributed to nanocrystalline diamond.

Paper Details

Date Published: 13 September 2002
PDF: 8 pages
Proc. SPIE 4760, High-Power Laser Ablation IV, (13 September 2002); doi: 10.1117/12.482098
Show Author Affiliations
Florence Garrelie, Univ. Jean Monnet Saint-Etienne (France)
Anne Sophie Loir, Univ. Jean Monnet Saint-Etienne (France)
Francois Goutaland, Univ. Jean Monnet Saint-Etienne (France)
C. Donnet, Univ. Jean Monnet Saint-Etienne (France)
Ronan Le Harzic, Univ. Jean Monnet Saint-Etienne (France)
Benoit Angleraud, Institut des Materiaux Jean Rouxel (France)
Youcef Ouerdane, Univ. Jean Monnet Saint-Etienne (France)
Pierre Laporte, Univ. Jean Monnet Saint-Etienne (France)

Published in SPIE Proceedings Vol. 4760:
High-Power Laser Ablation IV
Claude R. Phipps, Editor(s)

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