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Proceedings Paper

30-dB gain at 1500 nm in S-band erbium-doped silica fiber with distributed ASE suppression
Author(s): Mark Alan Arbore; Yidong Zhou; Gregory Keaton; Thomas J. Kane
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Paper Abstract

S-band amplification with >30 dB peak gain at 1500 nm, >20 dB gain for wavelengths between 1475 nm and 1520 nm, and 5 dB noise figure is demonstrated in Erbium-doped Alumino-germanosilicate fiber. Using standard MCVD processing and solution doping, we combined a depressed-cladding fiber design with erbium doping to create a new type of gain fiber. A fundamental mode cutoff near 1530 nm provides distributed suppression of C-band amplified spontaneous emission, thereby enabling the high population inversion required for S-band gain. This type of S-band amplifier is compatible with standard fusion splicing techniques and is pumped by standard 980 nm pump lasers. In this talk, we will describe gain and noise characteristics for several amplifier architectures, gain saturation characteristics, and gain flattening.

Paper Details

Date Published: 17 June 2003
PDF: 6 pages
Proc. SPIE 4989, Optical Devices for Fiber Communication IV, (17 June 2003); doi: 10.1117/12.481150
Show Author Affiliations
Mark Alan Arbore, Lightwave Electronics Corp. (United States)
Yidong Zhou, Lightwave Electronics Corp. (United States)
Gregory Keaton, Lightwave Electronics Corp. (United States)
Thomas J. Kane, Lightwave Electronics Corp. (United States)

Published in SPIE Proceedings Vol. 4989:
Optical Devices for Fiber Communication IV
Michel J. F. Digonnet, Editor(s)

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