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Proceedings Paper

Analysis of angle dependence of GaAs-based RCE photodetectors
Author(s): Kun Liang; Xiao Hong Yang; Yun Du; Rong Han Wu
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Paper Abstract

The theoretical analysis and experimental measurement on the angle dependence of quantum efficiency of GaAs based resonant cavity enhanced (RCE) photodetector is presented. By changing the angle of incoming light, about 40nm wavelength variation of peak quantum efficiency has been experimentally obtained. The peak quantum efficiency and optical bandwidth at different mode corresponding to different angle incidence have been characterized with different absorption dependence on wavelength. The convenient angle tuning of resonant mode will be helpful to relax the strict constraint of RCE photodetector to light source with narrow emission spectrum while especially applied in space optical detections and communications.

Paper Details

Date Published: 29 August 2002
PDF: 6 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481054
Show Author Affiliations
Kun Liang, Institute of Semiconductors (China)
Xiao Hong Yang, Institute of Semiconductors (China)
Yun Du, Institute of Semiconductors (China)
Rong Han Wu, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)

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