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Proceedings Paper

Fabrication of AlGaN/GaN high-electron-mobility transistors
Author(s): Tong Wu; Zhi-Biao Hao; Wenping Guo; Shu-Wei Wu; Yi Luo; Qing-Ming Zeng; Xian-Jie Li
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Paper Abstract

In this paper, the growth and device fabrication of AIGaN/GaN HEMTs are investigated by using Metal-Organic Vapor Phase Epi taxy (MOVPE) system. The grown wafer consists of a 3-μm-thick unintentionally doped GaN buffer layer, an undoped AIGaN spacer layer, and a n-doped Al0.28Ga0.72N cap layer. The growth condition and the wafer structure are optimized for high performance devices. The devices exhibit a maximum saturation current density of 1000 mA/mm, good pinch off at -5V gate bias and a peak extrinsic transconductance of 180 mS/mm. Further efforts to improve the device performance are also discussed.

Paper Details

Date Published: 29 August 2002
PDF: 3 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481021
Show Author Affiliations
Tong Wu, Tsinghua Univ. (China)
Zhi-Biao Hao, Tsinghua Univ. (China)
Wenping Guo, Tsinghua Univ. (China)
Shu-Wei Wu, Tsinghua Univ. (China)
Yi Luo, Tsinghua Univ. (China)
Qing-Ming Zeng, 13th Institute of Electronics (China)
Xian-Jie Li, 13th Institute of Electronics (China)

Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)

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