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Proceedings Paper

Small Au/SAM/Au junctions by EB lithography
Author(s): Yasuyuki Miyamoto; Kazuki Sasao; Yasuo Azuma; Naotaka Kaneda; Yutaka Majima
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Paper Abstract

A self-assembled monolayer (SAM) molecule is attractive as an active region of an electron device because of its inherent small thickness (~1-2 nm) between each electrode. We reported processes to fabricate small Au/SAM/Au junctions by using electron beam lithography. As a SAM molecule, we used benzene-1,4-dithiol on Au. To obtain an atomically flat Au electrode without deformation of shape, lower deposition rate, lower sample temperature, and adequate annealing temperature were required. By using a SiO2 pattern as a shadow mask, twice oblique evaporations made small Au/SAM/Au junctions. A minimum feature size of slit of a SiO2 pattern was 160 nm by using electron beam lithography. Si substrate isolated by SiO2 works as a gate electrode of three terminal devices by the Au/SAM/Au junctions. Observed current-voltage characteristics between the drain and the source showed nonlinear characteristics and weak modulation by gate bias was observed. The processes to improve device characteristics are also discussed.

Paper Details

Date Published: 1 July 2003
PDF: 9 pages
Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.479602
Show Author Affiliations
Yasuyuki Miyamoto, Tokyo Institute of Technology (Japan)
Kazuki Sasao, Tokyo Institute of Technology (Japan)
Yasuo Azuma, Tokyo Institute of Technology (Japan)
Naotaka Kaneda, Tokyo Institute of Technology (Japan)
Yutaka Majima, Tokyo Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 4999:
Quantum Sensing: Evolution and Revolution from Past to Future
Manijeh Razeghi; Gail J. Brown, Editor(s)

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