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Proceedings Paper

Semiconductor laser crystallization of a-Si:H
Author(s): B. K. Nayak; J. McLeskey; A. Selvan; B. Eaton; Mool C. Gupta; R. Romero; G. Ganguly
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Paper Abstract

Results of semiconductor laser crystallization of a-Si:H on transparent conducting fluoride doped tin oxide coated glass are discussed. A-Si:H films were prepared by plasma enhanced chemical vapor deposition. Laser crystallized films of a-Si:H were characterized by X-ray diffraction and optical microscopy. Semiconductor laser crystallization process as compared to well-established excimer laser offers low cost large area technology for solar cell, display and other applications. Longer wavelength of diode lasers (805 nm) allows light to penetrate deeper in the films for crystallization of thicker films required for enhanced light absorption.

Paper Details

Date Published: 17 October 2003
PDF: 4 pages
Proc. SPIE 4977, Photon Processing in Microelectronics and Photonics II, (17 October 2003); doi: 10.1117/12.479573
Show Author Affiliations
B. K. Nayak, Old Dominion Univ. (United States)
J. McLeskey, Old Dominion Univ. (United States)
A. Selvan, Old Dominion Univ. (United States)
B. Eaton, Old Dominion Univ. (United States)
Mool C. Gupta, Old Dominion Univ. (United States)
R. Romero, BP Solar (United States)
G. Ganguly, BP Solar (United States)

Published in SPIE Proceedings Vol. 4977:
Photon Processing in Microelectronics and Photonics II
Alberto Piqué; David B. Geohegan; Friedrich G. Bachmann; Koji Sugioka; Frank Träger; Jan J. Dubowski; Peter R. Herman; Willem Hoving; Kouichi Murakami; Kunihiko Washio; Jim Fieret, Editor(s)

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