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Proceedings Paper

High-speed and highly reliable InP/InGaAs avalanche photodiode for optical communications
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Paper Abstract

We present a review of the characteristics of several different types of high speed InGaAs/InP avalanche photodiode (APD)s that we have developed for different guard ring depth and for different main p-n junction shape. The APD structure that we propose consists of a greatly reduced width in InP multiplication layer and a high doping concentrated electric field buffer layer, where we also adopted a floating guard ring and a shaped main junction with recess etching for a reliable operation of an APD. We obtained high reliability APDs, which are tested for two-dimensional gain behavior and for accelerated life tests by monitoring dark current and breakdown voltage. The gain and bandwidth product of the best of our APDs was measured as high as 80 GHz.

Paper Details

Date Published: 1 July 2003
PDF: 8 pages
Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.479551
Show Author Affiliations
Kyung-Sook Hyun, Sejong Univ. (South Korea)
Y. Paek, Sejong Univ. (South Korea)
Yong-Hwan Kwon, Telecom.Basis Research Lab. (South Korea)
Ilgu Yun, Yonsei Univ. (South Korea)
El-Hang Lee, Inha Univ. (South Korea)

Published in SPIE Proceedings Vol. 4999:
Quantum Sensing: Evolution and Revolution from Past to Future
Manijeh Razeghi; Gail J. Brown, Editor(s)

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