Highly accurate resistances can be made by iteratively laser inducing local diffusion of dopants from the drain and source of a gateless field effect transistor into its channel, thereby forming an electrical link between two adjacent p-n junction diodes. These laser tuned microdevices have been electrically characterized and their current-voltage (I-V) behaviors are linear at low voltages and sublinear at higher voltages where carrier mobility is affected by the presence of high fields. Considering that the microdevice is a one dimensional trap less n+ υ n+ structure, we have developed a theoretical current-voltage equation that satisfies these experimental results.

Date Published: 17 October 2003
PDF: 5 pages
Proc. SPIE 4977, Photon Processing in Microelectronics and Photonics II, (17 October 2003); doi: 10.1117/12.479412

Published in SPIE Proceedings Vol. 4977:
Photon Processing in Microelectronics and Photonics II
Alberto Piqué; David B. Geohegan; Friedrich G. Bachmann; Koji Sugioka; Frank Träger; Jan J. Dubowski; Peter R. Herman; Willem Hoving; Kouichi Murakami; Kunihiko Washio; Jim Fieret, Editor(s)