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Proceedings Paper

Excimer and femtosecond pulsed laser induced forward transfer process of metal thin film
Author(s): Hirokazu Yamada; Tomokazu Sano; Etsuji Ohmura; Isamu Miyamoto
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Paper Abstract

The investigation of laser induced forward transfer (LIFT) process using femtosecond pulsed laser comparing with that using excimer laser is reported. Ni thin film of several hundreds of nanometer thickness, which is deposited on fused silica substrate, was irradiated by single pulse of KrF excimer laser (wavelength: 248 nm, pulse width: 30 ns) or femtosecond pulsed laser (wavelength: 800 nm, pulse width: 120 fs), and transferred to a Si acceptor substrate. It is shown that laser beam profile affected the removal of thin film. It is revealed that adhesion of particles was inhibited using femtosecond pulsed laser in comparison with the case of excimer LIFT process.

Paper Details

Date Published: 17 October 2003
PDF: 8 pages
Proc. SPIE 4977, Photon Processing in Microelectronics and Photonics II, (17 October 2003); doi: 10.1117/12.479249
Show Author Affiliations
Hirokazu Yamada, Osaka Univ. (Japan)
Tomokazu Sano, Osaka Univ. (Japan)
Etsuji Ohmura, Osaka Univ. (Japan)
Isamu Miyamoto, Osaka Univ. (Japan)

Published in SPIE Proceedings Vol. 4977:
Photon Processing in Microelectronics and Photonics II
Alberto Piqué; David B. Geohegan; Friedrich G. Bachmann; Koji Sugioka; Frank Träger; Jan J. Dubowski; Peter R. Herman; Willem Hoving; Kouichi Murakami; Kunihiko Washio; Jim Fieret, Editor(s)

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