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Proceedings Paper

Growth and characterization of ZnSe single crystal by CVT method directly from elements zinc and selenium
Author(s): Huanyong Li; Wanqi Jie
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Paper Abstract

The ZnSe single crystal with 8×7×0.8mm in size was grown directly from commercial grade high-purity elements, zinc(6N) and selenium(5N), by the CVT method. The chemical transport agent of (NH4)3ZnCl5 and the growth temperature of 1001~1005° C were employed. The ZnSe crystal shows only (111) face. The FWHM value of double crystal rocking curve of as-grown ZnSe slice was 50s due to the influence of free dendrite crystal microscope on the surface of ZnSe slice, which was in good agreement with the RO-XRD FWHM value of 48sec. The photoluminescence spectrum of the as-grown ZnSe crystal consists of a DAP emission and a broad SA luminescence band. The average etch pit density was about (5~8)×104cm-2. The infrared (IR) transmission spectra and ultraviolet absorption measurement indicated that the ZnSe single crystal has good crystalline perfection and high optical quality. All the results confirmed the superiority of this CVT growth method for ZnSe single crystal.

Paper Details

Date Published: 16 June 2003
PDF: 9 pages
Proc. SPIE 4970, Laser Crystals, Glasses, and Nonlinear Materials Growth and Characterization, (16 June 2003); doi: 10.1117/12.479013
Show Author Affiliations
Huanyong Li, Northwest Polytechnic Univ. (China)
Wanqi Jie, Northwest Polytechnic Univ. (China)

Published in SPIE Proceedings Vol. 4970:
Laser Crystals, Glasses, and Nonlinear Materials Growth and Characterization
Yehoshua Y. Kalisky, Editor(s)

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