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Proceedings Paper

Laser spectroscopy of semiconductor quantum wires
Author(s): V. S. Dneprovskii; E. A. Zhukov; K. Chernoutsan; O. Shaligina
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Paper Abstract

Different laser spectroscopy methods have been utilized to investigate the optical and nonlinear optical properties of semiconductor (GaAs and CdSe) quantum wires with dielectric barriers and porous Si and InP. The results of the measurements have allowed to conclude that exciton transitions dominate in the absorption and luminescence spectra. The binding energy of excitons in these semiconductor-dielectric quantum wires exceeds 100 meE. The dielectric enhancement of the binding energy and oscillator strength of excitons may be explained by the increasing of electron-hole attraction due to the large difference of the semiconductor and dielectric permittivites.

Paper Details

Date Published: 9 August 2002
PDF: 7 pages
Proc. SPIE 4762, ALT'01 International Conference on Advanced Laser Technologies, (9 August 2002); doi: 10.1117/12.478648
Show Author Affiliations
V. S. Dneprovskii, M.V. Lomonosov Moscow State Univ. (Russia)
E. A. Zhukov, M.V. Lomonosov Moscow State Univ. (Russia)
K. Chernoutsan, M.V. Lomonosov Moscow State Univ. (Russia)
O. Shaligina, M.V. Lomonosov Moscow State Univ. (Russia)

Published in SPIE Proceedings Vol. 4762:
ALT'01 International Conference on Advanced Laser Technologies
Dan C. Dumitras; Maria Dinescu; Vitali I. Konov, Editor(s)

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