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Proceedings Paper

Quantum dot formation with silicon doping in InGaN/GaN quantum well structures and its implications in radiative mechanisms
Author(s): Yung-Chen Cheng; Cheng-Hua Tseng; Chen Hsu; Kung-Jen Ma; Shih-Wei Feng; En-Chiang Lin; Chih Chung Yang; Jen-Inn Chyi
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Paper Abstract

Optical properties and material microstructures of three InGaN/GaN quantum well (QW) samples with various silicon-doping concentrations in barriers were measured. From the high-resolution transmission electron microscopy images, quantum dots (QDs) of a few nm in size were observed in silicon-doped samples. The regularities of QDs in size, shape and distribution increased with doping concentration up to 5 x 1018 cm-3. Such observations implied that the reduction of quantum-confined Stark effect in such a sample was due to the relaxation of strain energy in QDs with silicon doping, besides the carrier screen effect. In other words, the microstructures were crucially changed with silicon doping in barriers. Also, the carrier localization effect was actually enhanced although potential fluctuation indeed became less randomly distributed. The calibrated radiative lifetimes in both silicon-doped samples showed the consistent trend of the formation of 0-D structure upon silicon doping.

Paper Details

Date Published: 1 July 2003
PDF: 6 pages
Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.477794
Show Author Affiliations
Yung-Chen Cheng, National Taiwan Univ. (Taiwan)
Cheng-Hua Tseng, National Defense Univ. (Taiwan)
Chen Hsu, National Defense Univ. (Taiwan)
Kung-Jen Ma, Chung Hua Univ. (Taiwan)
Shih-Wei Feng, National Taiwan Univ. (Taiwan)
En-Chiang Lin, National Taiwan Univ. (Taiwan)
Chih Chung Yang, National Taiwan Univ. (Taiwan)
Jen-Inn Chyi, National Central Univ. (Taiwan)

Published in SPIE Proceedings Vol. 4999:
Quantum Sensing: Evolution and Revolution from Past to Future
Manijeh Razeghi; Gail J. Brown, Editor(s)

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