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Proceedings Paper

Process development of 6-in EUV mask with TaBN absorber
Author(s): Tsutomu Shoki; Morio Hosoya; Takeru Kinoshita; Hideo Kobayashi; Youichi Usui; Ryo Ohkubo; Shinichi Ishibashi; Osamu Nagarekawa
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Paper Abstract

6-inch EUV masks consisting of Mo/Si multilayers and patterned CrX buffer and TaBN absorber layers have recently been developed and evaluated. Mo/Si multilayers with a relatively high EUV reflectivity of 66 percent and an excellent uniformity were obtained on the polished ULE substrates by an ion beam sputtering method. The multilayers showed high durability to the acid abased cleaning and baking at 150 degrees C used in the conventional mask-making process. The Cr based film was optimized as a repair buffer to obtain a high reflectivity of 52 percent at 257 nm and low stress within 100 MPa. TaBN absorbers with a low reflectivity were obtained by optimizing the film compositions, which resulted in a high image contrast to the multilayer for DUV inspection. An EUV contrast level of 99 percent was achieved for a thinner, 100-nm thick absorber stack. Using the optimized mask process, EUV mask with patterns of 180-nm width were successfully obtained, without a significant drop in EUV reflectivity.

Paper Details

Date Published: 1 August 2002
PDF: 8 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.477007
Show Author Affiliations
Tsutomu Shoki, HOYA Corp. (Japan)
Morio Hosoya, HOYA Corp. (Japan)
Takeru Kinoshita, HOYA Corp. (Japan)
Hideo Kobayashi, HOYA Corp. (Japan)
Youichi Usui, HOYA Corp. (Japan)
Ryo Ohkubo, HOYA Corp. (Japan)
Shinichi Ishibashi, HOYA Corp. (Japan)
Osamu Nagarekawa, HOYA Corp. (Japan)

Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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