Proceedings Paper
Imaging capability of low-energy electron-beam proximity projection lithography toward the 70-nm node| Format | Member Price | Non-Member Price |
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Paper Abstract
The technological systematics for low-energy electron-beam proximity-projection lithography (LEEPL) is discussed with particular focuses on the key ingredients such as mask, resist and alignment. We have developed a mechanically rigid 1X stencil mask supported by a grid-work of struts, high-resolution chemically-amplified resists to be used for multi layer processes, and the accurate alignment method to overlay complementary split patterns. The LEEPL beta machine as combined with these techniques was successfully used to demonstrate its imaging capability for the 70 nm node.
Paper Details
Date Published: 1 August 2002
PDF: 10 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476996
Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)
PDF: 10 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476996
Show Author Affiliations
Hiroyuki Nakano, Sony Corp. (Japan)
Kumiko Oguni, Sony Corp. (Japan)
Shinichiro Nohdo, Sony Corp. (Japan)
Kumiko Oguni, Sony Corp. (Japan)
Shinichiro Nohdo, Sony Corp. (Japan)
Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)
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