Share Email Print

Proceedings Paper

Development of hard pellicle for 157 nm
Author(s): Kaname Okada; K. Ootsuka; I. Ishikawa; Yoshiaki Ikuta; H. Kojima; T. Kawahara; T. Minematsu; H. Mishiro; Shinya Kikugawa; Y. Sasuga
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Projection photolithography at 157 nm is now under research as a possible extension of current 248 nm and planned 193 nm technologies .We have found that a thin-film fused silica glass pellicle would be available to 157nm lithography because of its high durability to F2 laser irradiation . In this paper, we present the performance of the hard pellicle made of AQF. Transmission is 97.6 percent when AR films are coated on both surfaces, and its uniformity at 157.6 nm is better than +/- 0.2 percent, and birefringence is within 1 nm. We developed a new evaluation system of a hard pellicle bending in horizontal position and in vertical position. We achieved less than 1um sagging with 800um thickness membrane and glass frame made of modified fused silica in horizontal position.

Paper Details

Date Published: 1 August 2002
PDF: 9 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476971
Show Author Affiliations
Kaname Okada, Asahi Glass Co. Ltd. (Japan)
K. Ootsuka, Asahi Glass Co. Ltd. (Japan)
I. Ishikawa, Asahi Glass Co. Ltd. (Japan)
Yoshiaki Ikuta, Asahi Glass Co. Ltd. (Japan)
H. Kojima, Asahi Glass Co. Ltd. (Japan)
T. Kawahara, Asahi Glass Co. Ltd. (Japan)
T. Minematsu, Asahi Glass Co. Ltd. (Japan)
H. Mishiro, Asahi Glass Co. Ltd. (Japan)
Shinya Kikugawa, Asahi Glass Co. Ltd. (Japan)
Y. Sasuga, Asahi Glass Co. Ltd. (Japan)

Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?