KRS-XE is a chemically amplified resist developed to enable electron-beam lithography for mask making at the 100nm node. This material has been shown to provide an excellent process window for mask manufacturing at this node. Characterization of this material using both 50keV raster and 75keV vector scan e-beam exposure systems will be presented. A higher sensitivity version of this material has been developed specifically for a vector, shaped beam 50keV application. Initial mask manufacturing results for this higher sensitivity version of KRS-XE will be presented for 75keV. In addition, recent developments using KRS-XE formulations modified to achieve high sensitivity and improved etch resistance will be discussed.

Date Published: 1 August 2002
PDF: 12 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476946

Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)