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Proceedings Paper

Improved method for measuring and assessing reticle pinhole defects for the 100-nm lithography node
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Paper Abstract

With the approach of the 100nm-lithography node, an accurate and reliable method of measuring reticle pinhole defects becomes necessary to assess the capabilities of high-end reticle inspection equipment. The current measurement method of programmed defect pinholes consists of using a SEM. While this method is repeatable, it does not reliably represent the true nature of a pinhole. Earlier studies have suggested that since the SEM images only a top down view of the pinhole, the measurement does not accurately account for edge wall angle and partial filling which both reduce pinhole transmission and subsequent printability. Since wafer lithography and reticle inspection tools use transmitted illumination, pinhole detection performance based on SEM measurements is often erroneous. In this study, a pinhole test reticle was manufactured to further characterize the capabilities of a transmission method to measure pinholes.

Paper Details

Date Published: 1 August 2002
PDF: 7 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476917
Show Author Affiliations
Darren Taylor, Photronics Inc. (United States)
Anthony Vacca, KLA-Tencor Corp. (United States)
Larry S. Zurbrick, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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