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Proceedings Paper

Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS
Author(s): Sunkwang Hong; Tawei Ho; Liping Zhang; Alexander A. Sawchuk
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Paper Abstract

We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

Paper Details

Date Published: 30 May 2003
PDF: 8 pages
Proc. SPIE 4997, Photonics Packaging and Integration III, (30 May 2003); doi: 10.1117/12.476657
Show Author Affiliations
Sunkwang Hong, Univ. of Southern California (United States)
Tawei Ho, Univ. of Southern California (United States)
Liping Zhang, Univ. of Southern California (United States)
Alexander A. Sawchuk, Univ. of Southern California (United States)

Published in SPIE Proceedings Vol. 4997:
Photonics Packaging and Integration III
Randy A. Heyler; David J. Robbins; Ghassan E. Jabbour, Editor(s)

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