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Proceedings Paper

GaN-based light-emitting diodes suitable for white light
Author(s): Takashi Mukai; Motokazu Yamada; Tomotsugu Mitani; Yukio Narukawa; Shuji Shioji; Isamu Niki; Shin-ya Sonobe; Kunihiro Izuno; Ryoma Suenaga
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Paper Abstract

High-efficient light emitting diodes (LEDs) emitting red, amber, green, blue and ultraviolet light have been obtained through the use of an InGaN active layers. The localized energy states caused by In composition fluctuation in the InGaN active layer seem to be related to the high efficiency of the InGaN-based emitting devices in spite of having a large number of threading dislocations (TDs). InGaN single-quantum-well-structure blue LEDs were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The characteristics of both LEDs was almost same. These results indicate that the dislocation doesn't affect the efficiency practically. Recently, the development of high-power light source using GaN-based LEDs has become active. In such high-power LEDs, the density of forward current is much higher than that of past LEDs. Therefore, an advantage of carrier localization in InGaN active layer becomes small, because of band filling under high injection level. This means that reducing the density of TDs becomes important, just like GaN-based laser diodes. Also, we show recent results of GaN-based LEDs.

Paper Details

Date Published: 3 July 2003
PDF: 10 pages
Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); doi: 10.1117/12.476555
Show Author Affiliations
Takashi Mukai, Nichia Corp. (Japan)
Motokazu Yamada, Nichia Corp. (Japan)
Tomotsugu Mitani, Nichia Corp. (Japan)
Yukio Narukawa, Nichia Corp. (Japan)
Shuji Shioji, Nichia Corp. (Japan)
Isamu Niki, Nichia Corp. (Japan)
Shin-ya Sonobe, Nichia Corp. (Japan)
Kunihiro Izuno, Nichia Corp. (Japan)
Ryoma Suenaga, Nichia Corp. (Japan)

Published in SPIE Proceedings Vol. 4996:
Light-Emitting Diodes: Research, Manufacturing, and Applications VII
E. Fred Schubert; Kurt J. Linden; H. Walter Yao; Daniel J. McGraw, Editor(s)

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