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Proceedings Paper

Absorption of guided modes in light-emitting diodes
Author(s): Sven-Silvius Schad; Barbara Neubert; Matthias Seyboth; Frank Habel; Christoph Eichler; Marcus Scherer; Peter Unger; Wolfgang Schmid; Christian Karnutsch; Klaus P. Streubel
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Paper Abstract

The absorption of lateral guided modes in light emitting diodes is determined by the photocurrent measurement method. A theory for waveguide dispersion is presented and extended by ray-tracing simulations. Absorption coefficients of InGaN-on-sapphire and AlGaInP-based structures is evaluated by comparison with simulation curves. For nitride-based samples with emission wavelengths of 415 nm and 441 nm an absorption of 7 cm-1 is obtained. It is found that scattering is present in the buffer layer and influences the lateral intensity distribution. The investigated AlGaInP-based sample exhibits an absorption of α = 30 cm-1 at 650 nm emission wavelength.

Paper Details

Date Published: 3 July 2003
PDF: 8 pages
Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); doi: 10.1117/12.476552
Show Author Affiliations
Sven-Silvius Schad, Univ. Ulm (Germany)
Barbara Neubert, Univ. Ulm (Germany)
Matthias Seyboth, Univ. Ulm (Germany)
Frank Habel, Univ. Ulm (Germany)
Christoph Eichler, Univ. Ulm (Germany)
Marcus Scherer, Univ. Ulm (Germany)
Peter Unger, Univ. Ulm (Germany)
Wolfgang Schmid, OSRAM Opto Semiconductors GmbH & Co. (Germany)
Christian Karnutsch, OSRAM Opto Semiconductors GmbH & Co. (Germany)
Klaus P. Streubel, OSRAM Opto Semiconductors GmbH & Co. (Germany)

Published in SPIE Proceedings Vol. 4996:
Light-Emitting Diodes: Research, Manufacturing, and Applications VII
E. Fred Schubert; Kurt J. Linden; H. Walter Yao; Daniel J. McGraw, Editor(s)

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