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Proceedings Paper

MOCVD-grown InGaAsN quantum-well lasers
Author(s): Luke J. Mawst; Nelson Tansu; Jeng-Ya Yeh
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Paper Abstract

High performance strained-layer InGaAs (λ=1.2μm) and InGaAsN (λ=1.3μm) quantum-well lasers have been realized by MOCVD growth using Arsine and Dimethylhydrazine as the group V precursors. The use of GaAsP high bandgap barrier layers is shown to improve device performance over conventional GaAs barrier lasers. By comparison to conventional InP-based technology, InGaAsN lasers exhibit very low threshold current density at high temperature (390A/cm2 at 80°C), using a single-quantum well design.

Paper Details

Date Published: 3 July 2003
PDF: 15 pages
Proc. SPIE 4995, Novel In-Plane Semiconductor Lasers II, (3 July 2003); doi: 10.1117/12.475793
Show Author Affiliations
Luke J. Mawst, Univ. of Wisconsin-Madison (United States)
Nelson Tansu, Univ. of Wisconsin-Madison (United States)
Jeng-Ya Yeh, Univ. of Wisconsin-Madison (United States)

Published in SPIE Proceedings Vol. 4995:
Novel In-Plane Semiconductor Lasers II
Claire F. Gmachl; David P. Bour, Editor(s)

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