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Proceedings Paper

Exposing the DUV SCAAM: 75-nm imaging on the cheap
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Paper Abstract

Multiple exposure alternating phase-shifting mask lithography can exploit economies of scale to lower total manufacturing cost if chip designers adhere to simple rules, some of which also would apply to dipole illumination and other sub-wavelength lithography systems. The most promising system employs the Sidewall Chrome Alternating Aperture Mask structure which fulfills the theoretical expectations of strong phase-shift optics and offers the potential for low cost sub-100nm imaging with 248nm light. It has already printed 73nm semi-dense lines with 248nm light at k1 equals 0.19 and demonstrated a useful common processing window for less dense and isolated structures.

Paper Details

Date Published: 12 July 2002
PDF: 10 pages
Proc. SPIE 4692, Design, Process Integration, and Characterization for Microelectronics, (12 July 2002); doi: 10.1117/12.475666
Show Author Affiliations
David Levenson, M.D. Levenson Consulting (United States)
Takeaki Ebihara, Canon USA, Inc. (United States)

Published in SPIE Proceedings Vol. 4692:
Design, Process Integration, and Characterization for Microelectronics
Alexander Starikov; Alexander Starikov; Kenneth W. Tobin Jr., Editor(s)

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