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Thermo- and galvanomagnetic investigations of semiconductors at high pressure up to 30 GPa
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Paper Abstract

At ultrahigh pressure the thermoelectric power, magneto resistance, and thermo magnetic effects were measured for Te, Se and S samples in the vicinity of semiconductor-metal phase boundary. The significant longitudinal and transverse Nernst-Ettingshausen effects observed for Te and Se allowed to estimate the scattering parameter for charge carriers. The increase of holes mobility obtained from longitudinal and transverse Nernst-Ettinghausen effects being consistent with growth of magneto resistance under pressure. These experiments gave configuration to decreasing of effective mass of holes at closing of direct semiconductor gap. From thermoelectric power measurements up to 40 GPa Sulfur was found to be a narrow-gap semiconductor with large negative pressure coefficient of electron gap. Negative magneto resistance effect observed in S suggests very low mobility of holes, that is in well agreement with retaining molecular type of crystal structure. Thermo magnetic effects, like galvanomagnetic ones, seems to be perspective for using in micro-device technology.

Paper Details

Date Published: 12 July 2002
PDF: 8 pages
Proc. SPIE 4692, Design, Process Integration, and Characterization for Microelectronics, (12 July 2002); doi: 10.1117/12.475655
Show Author Affiliations
Sergey V. Ovsyannikov, Institute of Metal Physics (Russia)
Vladimir V. Shchennikov, Institute of Metal Physics (Russia)

Published in SPIE Proceedings Vol. 4692:
Design, Process Integration, and Characterization for Microelectronics
Alexander Starikov; Alexander Starikov; Kenneth W. Tobin Jr., Editor(s)

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