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Proceedings Paper

GOI characterization of 300-mm furnace tools
Author(s): Karl E. Mautz
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Paper Abstract

The purpose of this characterization was to gain an initial understand of the gate oxide integrity (GOI) differences on wafers processed in the 300mm furnace tools at SC300, a joint venture between Motorola and Infineon Technologies for 300mm wafer, process and equipment development, compared to similarly processed 200mm wafers at Motorola. Measurements were done using mercury probe tools located at different sites to characterize the various gate oxide films and thicknesses. Separately, a study was done on defectivity levels of the Epi-layered 300mm wafers used in this study.

Paper Details

Date Published: 12 July 2002
PDF: 12 pages
Proc. SPIE 4692, Design, Process Integration, and Characterization for Microelectronics, (12 July 2002); doi: 10.1117/12.475654
Show Author Affiliations
Karl E. Mautz, Motorola (United States)

Published in SPIE Proceedings Vol. 4692:
Design, Process Integration, and Characterization for Microelectronics
Alexander Starikov; Alexander Starikov; Kenneth W. Tobin Jr., Editor(s)

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