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Proceedings Paper

Packaged 40-Gbit/s backslot-type LiNbO3 optical modulator with a low driving voltage of 2.8 V
Author(s): Makoto Minakata; Jungo Kondo; Atuo Kondo; Kenji Aoki; Osamu Mitomi; Minoru Imaeda; Yoshinari Kozuka
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Paper Abstract

We propose a newly designed X-cut lithium niobate (LiNbO3) optical modulator. It has a two-step back-slot structure to satisfy the velocity matching condition without the buffer layer of silicon dioxide (Si02). Accordingly, this modulator can achieve low drive voltage and low optical insertion loss. In addition, dc-drift phenomena due to the buffer layer can be suppressed This structure is fabricated with micro-machining technology using excimer laser ablation. The optical 3-dBe bandwidth of fabricated modulator reaches 30GHz and the drive voltage is less than 3V at 1kHz. From the measurement of optical eye diagram at 43.5-Gb/s, the RF-extinction-ratio resulted in 12dB with the drive voltage of 4.lVp-p. This modulator has the sufficient capability for 40-Gb/s optical transmission systems.

Paper Details

Date Published: 11 July 2002
PDF: 10 pages
Proc. SPIE 4870, Active and Passive Optical Components for WDM Communications II, (11 July 2002);
Show Author Affiliations
Makoto Minakata, Shizuoka Univ. (Japan)
Jungo Kondo, NGK Insulators, Ltd. (Japan)
Atuo Kondo, NGK Insulators, Ltd. (Japan)
Kenji Aoki, NGK Insulators, Ltd. (Japan)
Osamu Mitomi, NGK Insulators, Ltd. (Japan)
Minoru Imaeda, NGK Insulators, Ltd. (Japan)
Yoshinari Kozuka, NGK Insulators, Ltd. (Japan)

Published in SPIE Proceedings Vol. 4870:
Active and Passive Optical Components for WDM Communications II
Achyut Kumar Dutta; Abdul Ahad Sami Awwal; Niloy K. Dutta; Katsunari Okamoto, Editor(s)

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