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Proceedings Paper

Integrated photodiodes in standard BiCMOS technology
Author(s): Johannes Sturm; Simon Hainz; Gernot Langguth; Horst Zimmermann
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Paper Abstract

Photodiode structures were integrated in a low cost 0.5 μm silicon BiCMOS process using standard process flow without any technology modification. Rise times of 1.3ns and 1.4ns were measured for wavelengths λ of 660nm and 780nm with a responsivity of 0.23 A/W and 0.14 A/W, respectively. Photodiodes with a high responsivity of 0.42 A/W are reaching a risetime of 4ns for λ = 780nm. Comparable low values for the risetime at 780nm are reported in the literature for integrated photodiodes in standard silicon technologies only with a modification of the epitaxial substrate material. So this photodiodes are suitable for a wide variety of low-cost high-speed optical sensor applications, for optical fiber communication and fiber in home applications.

Paper Details

Date Published: 17 June 2003
PDF: 8 pages
Proc. SPIE 4989, Optical Devices for Fiber Communication IV, (17 June 2003); doi: 10.1117/12.474798
Show Author Affiliations
Johannes Sturm, Infineon Technologies AG (Austria)
Simon Hainz, Infineon Technologies AG (Austria)
Gernot Langguth, Infineon Technologies AG (Germany)
Horst Zimmermann, Technische Univ. Wien (Austria)

Published in SPIE Proceedings Vol. 4989:
Optical Devices for Fiber Communication IV
Michel J. F. Digonnet, Editor(s)

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