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Proceedings Paper

Solution to resist poisoning in the integration of 248- and 193-nm photoresists with low-k dielectric materials
Author(s): Sri Satyanarayana; Ken Brennan; Thieu Jacobs; Richard Berger
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Paper Abstract

This article presents a general solution to the resist poisoning problem in 248 and 193nm resists integrated with low k dielectrics in VFTL process. This study investigated the interactions of various 248nm and 193nm photoresists with spin-on low-k materials. Two kinds of experiments were conducted: (1) material characterization involving blanket film/s on bare Si wafers, and (2) interactions in the dual-damascene full via-first trench-last (VFTL) stacks. The first study facilitates a fundamental understanding of material interactions. This basic understanding can be then extended to high-resolution patterning. In particular, the VFTL process that involves photoresists, anti-reflective coatings, low-k materials, and hard masks was studied. The effects and interactions of via plasma etch and ash processes on subsequent trench lithography steps was also investigated. This article will present experimental results and strategies to reduce or eliminate photoresist poisoning in the full VFTL process.

Paper Details

Date Published: 30 July 2002
PDF: 8 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474624
Show Author Affiliations
Sri Satyanarayana, International SEMATECH (United States)
Ken Brennan, International SEMATECH (United States)
Texas Instruments Inc. (United States)
Thieu Jacobs, International SEMATECH (United States)
Philips Semiconductor (United States)
Richard Berger, International SEMATECH (United States)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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