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Proceedings Paper

157-nm technology: Where are we today?
Author(s): Jan Mulkens; Thomas J. Fahey; James A. McClay; Judon M. D. Stoeldraijer; Patrick Wong; Martin Brunotte; Birgit Mecking
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Paper Abstract

In this paper we present a status overview of the development of 157-nm lithography. Solutions and challenges in the exposure system design are discussed. The solutions and challenges include optics, purging, and reticle handling issues. The impact of CaF2 birefringence (intrinsic and stress induced) on lens performance is evaluated. Experimental data on optical path purging and radiation cleaning is presented. The pellicle dilemma is reviewed, and feasibility of a thick glass plate pellicle is discussed. Additionally, a status summary on resist process development is given.

Paper Details

Date Published: 30 July 2002
PDF: 13 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474610
Show Author Affiliations
Jan Mulkens, ASML (Netherlands)
Thomas J. Fahey, ASML (United States)
James A. McClay, ASML (United States)
Judon M. D. Stoeldraijer, ASML (Netherlands)
Patrick Wong, ASML (Belgium)
Martin Brunotte, Carl Zeiss (Germany)
Birgit Mecking, Carl Zeiss (Germany)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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