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Proceedings Paper

Influence of 157-nm specific cleaning procedures on the quality of FIB repair depositions on reticles
Author(s): Klaus Eisner; Christof M. Schilz; Alivina Williams; Stefan Hien; Martin Verbeek
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Paper Abstract

An UV lamp cleaning system (172 nm) and a 157 nm laser have been used to irradiate Ga-based focused ion beam (FIB) repair depositions on 193 nm and 157 nm reticles. The thickness change of the depositions due to the irradiation has been measured using an atomic force microscope. For the 193 nm reticle additional transmission measurements were realized. These depositions are found to be highly resistant to UV lamp cleaning treatments of up to 18h (2mW/cm2, 1% O2). Extended tests were also done with 157 nm irradiation (9kJ/cm2, 1 - 10ppm O2). At the end of these tests a film loss of the depositions of 0.4nm /kJ/cm2 and a transmission change of 10% could be determined.

Paper Details

Date Published: 30 July 2002
PDF: 9 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474602
Show Author Affiliations
Klaus Eisner, International SEMATECH (United States)
Christof M. Schilz, Infineon Technologies AG (Germany)
Alivina Williams, International SEMATECH (United States)
Stefan Hien, International SEMATECH (United States)
Martin Verbeek, Infineon Technologies AG (Germany)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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