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Proceedings Paper

Dipole decomposition mask design for full-chip implementation at 100-nm technology node and beyond
Author(s): Stephen Hsu; Noel P. Corcoran; Mark Eurlings; William T. Knose; Thomas L. Laidig; Kurt E. Wampler; Sabita Roy; Xuelong Shi; Chungwei Michael Hsu; J. Fung Chen; Jo Finders; Robert John Socha; Mircea V. Dusa
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Paper Abstract

For cost-effective Integrated Circuit (IC) manufacturing, it is highly desirable to use Binary-Chrome Masks (BIMs) instead of Phase Shifting Masks (PSMs). For the 70nm technology node, it is of particularly appealing if Argon Fluoride (ArF) BIMs can still be used. In this paper, we demonstrate that double dipole ArF exposure together with BIMs is capable of achieving acceptable overlapped process window for printing 70nm Critical Dimension (CD) features. The main challenge of using such a technique for IC manufacturing is how to properly decompose the original mask patterns into two separate orientation masks (vertical and horizontal). To compensate for the possible two-dimensional (2D) pattern distortion due to the strong proximity effect, a novel set of

Paper Details

Date Published: 30 July 2002
PDF: 15 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474596
Show Author Affiliations
Stephen Hsu, ASML MaskTools, Inc. (United States)
Noel P. Corcoran, ASML MaskTools, Inc. (United States)
Mark Eurlings, ASML (Netherlands)
William T. Knose, ASML MaskTools, Inc. (United States)
Thomas L. Laidig, ASML MaskTools, Inc. (United States)
Kurt E. Wampler, ASML MaskTools, Inc. (United States)
Sabita Roy, ASML MaskTools, Inc. (United States)
Xuelong Shi, ASML MaskTools, Inc. (United States)
Chungwei Michael Hsu, ASML MaskTools, Inc. (United States)
J. Fung Chen, ASML MaskTools, Inc. (United States)
Jo Finders, ASML (Netherlands)
Robert John Socha, ASML (United States)
Mircea V. Dusa, ASML (United States)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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