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Proceedings Paper

Through-pitch correction of scattering effects in 193-nm alternating phase-shift masks
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Paper Abstract

A methodology to study the bias and phase correction of strong phase-shifting masks is introduced. Isolated apertures are simulated to investigate the influence of aperture size, undercut etch, and quartz sidewall angle on aperture transmission. The simulations match well with experimental results that are measured with an ArF microlithography simulation microscope. For alternating apertures, electromagnetic calculations are done to solve for the diffracted fields. An analytical method is derived to deduce aperture bias and phase error from the diffracted orders. This method can be used as an easy way to optimize the cross section of the phase shifting mask. The method is demonstrated for the example of a single trench alternating phase shifting mask. A constant bias that minimizes the asymmetry and phase error without the need for an undercut etch is found. Such bias works for both the case of equal lines and spaces through pitch and constant linewidth through pitch. Because this bias is easy to design into a mask, the design and manufacturing of alternating phase shifting can be simplified.

Paper Details

Date Published: 30 July 2002
PDF: 11 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474584
Show Author Affiliations
Martin Burkhardt, IBM Microelectronics (United States)
Ronald L. Gordon, IBM Microelectronics (United States)
Michael S. Hibbs, IBM Microelectronics (United States)
Timothy A. Brunner, IBM Microelectronics (United States)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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