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Proceedings Paper

Evaluation of double focal plane exposure technique for 248-nm and 193-nm lithography for semidense trenches and contacts
Author(s): Francois Weisbuch; Francesco Enrichi; Gianfranco Capetti; Govanni Bianucci; Gina Cotti
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Paper Abstract

Double focal plane exposure technique has the property to increase greatly the depth of focus of a lithographic process and appears to be a solution to fulfil the requirements of the most aggressive lithographic targets. The purpose of this work is to investigate the performances of this technique and to understand its mechanisms, to be able to find the best conditions of use for a given process. A simple model based on aerial images considerations has been developed to determine the behaviors of the main lithographic parameters (DoFmax, Elmax, central dose, shape of the Bossung curves) for various values of the distance between the two focal planes. Comparisons with four experiments have been realized with different conditions (type of pattern, dimensions, wavelength, N.A. and coherence (sigma) ). The possibility to predict the best experimental conditions (trade-off between DoF, El, resolution and LER) has been verified.

Paper Details

Date Published: 30 July 2002
PDF: 12 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474542
Show Author Affiliations
Francois Weisbuch, STMicroelectronics (Italy)
Francesco Enrichi, STMicroelectronics (Italy)
Gianfranco Capetti, STMicroelectronics (Italy)
Govanni Bianucci, STMicroelectronics (Italy)
Gina Cotti, STMicroelectronics (Italy)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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