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Proceedings Paper

Printing 100-nm and sub-100-nm DRAM full-chip patterns with crosspole illumination in 0.63-NA ArF lithography
Author(s): Seok-Kyun Kim; Cheol-Kyu Bok; Ki-Soo Shin
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Paper Abstract

To achieve 100 nm DRAM full chip with 0.63 NA ArF lithography we used a new type of off-axis illumination, crosspole illumination which has four poles on axis. For lower than 0.33 k1 process double exposure technology has been introduced which is exposing cell and core/periphery region separately with different illumination conditions. But with crosspole 0.33 to 0.31 k1 process could be possible without double exposure. Advantages and disadvantages of crosspole illumination and successful result of printing 100 nm DRAM full chip are shown in this paper. And also ArF lithography issues occurred during processing DRAM full chip are reported such as lens heating, contamination optics and reticles, overlay errors induced by electron beam curing process and so on. To simulate patterning result we used HOST (Hynix OPC simulation tool) based on diffused aerial image model (DAIM). For all kinds of 100 nm DRAM patterns, we could get sufficient process latitude, more than 10% exposure latitude (EL) and 0.4 micrometers depth of focus (DOF). Also 95 nm DRAM cell patterns could be printed successfully with crosspole single exposure and this shows with 0.75 NA and 0.85NA ArF tools we can print 80 nm and 70 nm DRAM patterns, respectively.

Paper Details

Date Published: 30 July 2002
PDF: 9 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474536
Show Author Affiliations
Seok-Kyun Kim, Hynix Semiconductor, Inc. (South Korea)
Cheol-Kyu Bok, Hynix Semiconductor, Inc. (South Korea)
Ki-Soo Shin, Hynix Semiconductor, Inc. (South Korea)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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