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Proceedings Paper

OPC rectification of random space patterns in 193-nm lithography
Author(s): Mosong Cheng; Andrew R. Neureuther; Keeho Kim; Z. Mark Ma; Won D. Kim; Maureen A. Hanratty
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Paper Abstract

This paper presents a methodology for modeling the space printability at the gate level in 193nm lithography. Spaces are shown to be more susceptible to process variations and lens aberrations than lines are. Experimental Scanning Electron Microscopy (SEM) pictures show that the scum and bridging effects can occur in spaces although all the line critical dimensions (CDs) are on target. A resist imaging model is used to simulate the line CDs through defocus, pitch and size, and the prediction error is within 5nm. However, this model can not reasonably predict space CDs without using variable threshold, which is explained a proposed trajectory dissolution rate model. Based on the dissolution model, a process rule checker is proposed which inspects the peak light intensity in a space and compares it with a given threshold. This condition is verified experimentally.

Paper Details

Date Published: 30 July 2002
PDF: 8 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474512
Show Author Affiliations
Mosong Cheng, Univ. of California/Berkeley (United States)
Andrew R. Neureuther, Univ. of California/Berkeley (United States)
Keeho Kim, Texas Instruments Inc. (United States)
Z. Mark Ma, Texas Instruments Inc. (United States)
Won D. Kim, Texas Instruments Inc. (United States)
Maureen A. Hanratty, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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