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Proceedings Paper

Effect of device parameters on the bandwidth calculations of ultrahigh-speed optical modulators
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Paper Abstract

The effect of velocity matching, impedance matching, conductor loss and dielectric loss on the optical bandwidth of an ultra-high-speed lithium niobate (LN) modulator is reported by using the finite element method. It is shown that for an etched LN modulator the product VπL could be reduced by 30% and it is also relatively easier to match both Nm and Zc simultaneously. The work indicates that both the dielectric loss and impedance matching play a key role for velocity matched high-speed modulators along with the low conductor loss. The effects of etch depth, buffer thickness, electrode width and the gap between the electrodes on device performance are also illustrated.

Paper Details

Date Published: 25 July 2003
PDF: 11 pages
Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.474372
Show Author Affiliations
B. M. Azizur Rahman, City Univ. London (United Kingdom)
Shyqyri Haxha, City Univ. London (United Kingdom)
Kenneth T. V. Grattan, City Univ. London (United Kingdom)

Published in SPIE Proceedings Vol. 4986:
Physics and Simulation of Optoelectronic Devices XI
Marek Osinski; Hiroshi Amano; Peter Blood, Editor(s)

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