We report here uncooled and thermoelectrically cooled InAs photodetectors designed for fast and sensitive detection of IR radiation. This has been achieved by the use of a complex architecture of the device that ensures reduced thermal generation of charge carriers, fast diffusion and drift transport of photogenerated carriers across the absorber region, a low series resistance, and a low capacitance. In addition, the device are monolithically immersed to GaAs hyperhemispherical microlenses that reduces capacitance by more than two orders of magnitude in comparison to non-immersed devices of the same optical area. As a result, the optimized devices are characterized by picosecond response time.

Date Published: 17 February 2003
PDF: 6 pages
Proc. SPIE 4833, Applications of Photonic Technology 5, (17 February 2003); doi: 10.1117/12.474368

Published in SPIE Proceedings Vol. 4833:
Applications of Photonic Technology 5
Roger A. Lessard; George A. Lampropoulos; Gregory W. Schinn, Editor(s)