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Proceedings Paper

Polysulfone-novolac resist for electron-beam lithography: II. effects of resist formulation and processing
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Paper Abstract

The goal of this work was to develop a resist material for high-keV (>=10 keV) electron beam patterning with: (1) high sensitivity (~10 (mu) C/cm2 50 keV), (2) high contrast, and (3) etch resistance comparable to current optical resists. In this work, an approach was desired that used multi-component resist design to (1) decouple sensitivity from etch performance and to improve resist contrast but (2) avoided environmental stability problems. Therefore, a resist design first proposed by researchers at IBM in the late 1980s that uses an electron beam sensitive polymeric dissolution inhibitor (poly (2-methyl-1-pentene co 2-ethoxyethyl-methallyl ether sulfone)) in conjunction with novolac resins was explored in this work. Significant advancements have been made in high performance novolac resins used for advanced I-line resist materials since the original work performed at IBM. Thus, one of the primary reasons for reinvestigating this resist design is to evaluate the performance of resists formulated using polysulfone dissolution inhibitors in conjunction with such advanced novolac resins. In this work, the basic lithographic performance of sulfone-novolac system (SNS) resists formulated using modern novolac resins was evaluated and optimized by varying the resist film preparation and development conditions.

Paper Details

Date Published: 24 July 2002
PDF: 12 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474244
Show Author Affiliations
Ankur Agrawal, Georgia Institute of Technology (United States)
Clifford L. Henderson, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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