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Illumination, acid diffusion, and process optimization considerations for 193-nm contact hole resists
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Paper Abstract

We have studied 193 nm contact hole resists in view of resist components, process conditions and optical settings. Sidewall roughness was improved by optimizing photoacid generators. Side lobes were eliminated by applying higher post exposure bake temperature or modification of polymers. The influence of optical settings, types of masks and mask bias was discussed with simulation and lithographic results and guidelines for better resolution and iso-dense bias were proposed. The optimized formulation, AZAX1050P has a high resolution combined with a large depth of focus and an iso- dense overlap window (130 nm(NA=0.63) DOF 0.38micrometers Exposure latitude 10%).

Paper Details

Date Published: 24 July 2002
PDF: 10 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474214
Show Author Affiliations
Takanori Kudo, Clariant Corp. (United States)
Eric L. Alemy, Clariant Corp. (United States)
Ralph R. Dammel, Clariant Corp. (United States)
Woo-Kyu Kim, Clariant Corp. (United States)
Sang-Ho Lee, Clariant Corp. (United States)
Seiya Masuda, Clariant Corp. (Japan)
Douglas S. McKenzie, Clariant Corp. (United States)
Dalil Rahman, Clariant Corp. (United States)
Andrew R. Romano, Clariant Corp. (United States)
Munirathna Padmanaban, Clariant Corp. (United States)
Jun-Sung Chun, Cypress Semiconductor Corporation (United States)
Jae Chang Jung, Hynix Semiconductor, Inc. (South Korea)
Sung-Koo Lee, Hynix Semiconductor, Inc. (South Korea)
Ki-Soo Shin, Hynix Semiconductor, Inc. (South Korea)
Hyeong-Soo Kim, Hynix Semiconductor, Inc. (South Korea)

Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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